MJ11029 Transistor Datasheet & Specifications
PNP
TO-3
High Power
SPTECH
VCEO
60V
Ic Max
50A
Pd Max
300W
hFE Gain
18000
Quick Reference
The MJ11029 is a PNP bipolar transistor in a TO-3 package by SPTECH. This datasheet provides complete specifications including 60V breakdown voltage and 50A continuous collector current. Download the MJ11029 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 50A | Collector current |
| Pd | 300W | Power dissipation |
| DC Current Gain | 18000 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 3.5V | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 2A | Leakage (ICBO) |
| Temp | -55℃~+200℃ | Operating temp |