MJ10012 Transistor Datasheet & Specifications
NPN
TO-3
High Power
SPTECH
VCEO
400V
Ic Max
10A
Pd Max
175W
hFE Gain
-
Quick Reference
The MJ10012 is a NPN bipolar transistor in a TO-3 package by SPTECH. This datasheet provides complete specifications including 400V breakdown voltage and 10A continuous collector current. Download the MJ10012 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 400V | Breakdown voltage |
| Ic | 10A | Collector current |
| Pd | 175W | Power dissipation |
| DC Current Gain | - | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 2.5V@10A,2A | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 1mA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |