LMBT3906N3T5G Transistor Datasheet & Specifications
PNP
SOT-883
General Purpose
LRC
VCEO
40V
Ic Max
200mA
Pd Max
250mW
hFE Gain
60
Quick Reference
The LMBT3906N3T5G is a PNP bipolar transistor in a SOT-883 package by LRC. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the LMBT3906N3T5G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | LRC | Original Manufacturer |
| Package | SOT-883 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 40V | Breakdown voltage |
| Ic | 200mA | Collector current |
| Pd | 250mW | Power dissipation |
| DC Current Gain | 60 | hFE / Beta |
| Frequency | 250MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |