KSE350G-JSM Transistor Datasheet & Specifications

NPN TO-126F High Power JSMSEMI
VCEO
300V
Ic Max
500mA
Pd Max
20W
hFE Gain
240
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Quick Reference

The KSE350G-JSM is a NPN bipolar transistor in a TO-126F package by JSMSEMI. This datasheet provides complete specifications including 300V breakdown voltage and 500mA continuous collector current. Download the KSE350G-JSM datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSMSEMIOriginal Manufacturer
PackageTO-126FPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO300VBreakdown voltage
Ic500mACollector current
Pd20WPower dissipation
DC Current Gain240hFE / Beta
Frequency-Transition speed (fT)
VCEsat1VSaturation voltage
Vebo3VEmitter-Base voltage
Cutoff Current100uALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all TO-126F NPN Transistors ›