KSC5502DTM Transistor Datasheet & Specifications
NPN
TO-252-2
High Power
onsemi
VCEO
600V
Ic Max
2A
Pd Max
87.83W
hFE Gain
40
Quick Reference
The KSC5502DTM is a NPN bipolar transistor in a TO-252-2 package by onsemi. This datasheet provides complete specifications including 600V breakdown voltage and 2A continuous collector current. Download the KSC5502DTM datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-252-2 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 600V | Breakdown voltage |
| Ic | 2A | Collector current |
| Pd | 87.83W | Power dissipation |
| DC Current Gain | 40 | hFE / Beta |
| Frequency | 11MHz | Transition speed (fT) |
| VCEsat | 3V | Saturation voltage |
| Vebo | 12V | Emitter-Base voltage |
| Cutoff Current | 500uA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |