IMX1T110 Transistor Datasheet & Specifications

NPN SOT-457 General Purpose ROHM
VCEO
50V
Ic Max
150mA
Pd Max
300mW
hFE Gain
120
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Quick Reference

The IMX1T110 is a NPN bipolar transistor in a SOT-457 package by ROHM. This datasheet provides complete specifications including 50V breakdown voltage and 150mA continuous collector current. Download the IMX1T110 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerROHMOriginal Manufacturer
PackageSOT-457Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic150mACollector current
Pd300mWPower dissipation
DC Current Gain120hFE / Beta
Frequency180MHzTransition speed (fT)
VCEsat400mVSaturation voltage
Vebo7VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-40℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all SOT-457 NPN Transistors ›