HFMMT493TA Transistor Datasheet & Specifications
NPN+PNP
SOT-23
General Purpose
HXY MOSFET
VCEO
100V
Ic Max
1A
Pd Max
250mW
hFE Gain
60
Quick Reference
The HFMMT493TA is a NPN+PNP bipolar transistor in a SOT-23 package by HXY MOSFET. This datasheet provides complete specifications including 100V breakdown voltage and 1A continuous collector current. Download the HFMMT493TA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 1A | Collector current |
| Pd | 250mW | Power dissipation |
| DC Current Gain | 60 | hFE / Beta |
| Frequency | 150MHz | Transition speed (fT) |
| VCEsat | 600mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |