HE8550G-D-AE3-R Transistor Datasheet & Specifications

PNP SOT-23 General Purpose UTC
VCEO
25V
Ic Max
1.5A
Pd Max
350mW
hFE Gain
160

Quick Reference

The HE8550G-D-AE3-R is a PNP bipolar transistor in a SOT-23 package by UTC. This datasheet provides complete specifications including 25V breakdown voltage and 1.5A continuous collector current. Download the HE8550G-D-AE3-R datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUTCOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO25VBreakdown voltage
Ic1.5ACollector current
Pd350mWPower dissipation
DC Current Gain160hFE / Beta
Frequency190MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
SS8550 PNP SOT-23 25V 1.5A 350mW
LBSS5240LT1G PNP SOT-23 40V 2A 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
DSS5240TQ-7 PNP SOT-23 40V 2A 730mW
SS8550 PNP SOT-23 25V 1.5A 200mW
ZXTP23015CFHTA PNP SOT-23 25V 6A 1.25W
SS8550(RANGE:300-400) PNP SOT-23 25V 1.5A 300mW
FMMT720QTA PNP SOT-23 40V 1.5A 806mW
PBSS5240T,215 PNP SOT-23 40V 2A 480mW