FZT757TA Transistor Datasheet & Specifications
PNP
SOT-223
General Purpose
DIODES
VCEO
300V
Ic Max
500mA
Pd Max
1.6W
hFE Gain
50
Quick Reference
The FZT757TA is a PNP bipolar transistor in a SOT-223 package by DIODES. This datasheet provides complete specifications including 300V breakdown voltage and 500mA continuous collector current. Download the FZT757TA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 300V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 1.6W | Power dissipation |
| DC Current Gain | 50 | hFE / Beta |
| Frequency | 30MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |