FZT560TA Transistor Datasheet & Specifications
PNP
SOT-223
High Power
DIODES
VCEO
500V
Ic Max
150mA
Pd Max
3W
hFE Gain
80
Quick Reference
The FZT560TA is a PNP bipolar transistor in a SOT-223 package by DIODES. This datasheet provides complete specifications including 500V breakdown voltage and 150mA continuous collector current. Download the FZT560TA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 500V | Breakdown voltage |
| Ic | 150mA | Collector current |
| Pd | 3W | Power dissipation |
| DC Current Gain | 80 | hFE / Beta |
| Frequency | 60MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| PBHV9050Z,115 | PNP | SOT-223 | 500V | 250mA | 1.4W |
| STN9360 | PNP | SOT-223 | 600V | 500mA | 1.6W |