FMMT493QTA Transistor Datasheet & Specifications
NPN
TO-236-3
General Purpose
DIODES
VCEO
100V
Ic Max
1A
Pd Max
500mW
hFE Gain
60
Quick Reference
The FMMT493QTA is a NPN bipolar transistor in a TO-236-3 package by DIODES. This datasheet provides complete specifications including 100V breakdown voltage and 1A continuous collector current. Download the FMMT493QTA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | TO-236-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 1A | Collector current |
| Pd | 500mW | Power dissipation |
| DC Current Gain | 60 | hFE / Beta |
| Frequency | 150MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| FMMT493TC | NPN | TO-236-3 | 100V | 1A | 500mW |
| FMMT494QTA | NPN | TO-236-3 | 120V | 1A | 500mW |