EMD22 Transistor Datasheet & Specifications
NPN+PNP
SOT-563
General Purpose
JSCJ
VCEO
300mV
Ic Max
100mA
Pd Max
150mW
hFE Gain
12
Quick Reference
The EMD22 is a NPN+PNP bipolar transistor in a SOT-563 package by JSCJ. This datasheet provides complete specifications including 300mV breakdown voltage and 100mA continuous collector current. Download the EMD22 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | SOT-563 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 300mV | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 150mW | Power dissipation |
| DC Current Gain | 12 | hFE / Beta |
| Frequency | 250MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 6.11kΩ | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| BC847BVN | NPN+PNP | SOT-563 | 45V | 100mA | 150mW |