DXTN3C100PSQ-13 Transistor Datasheet & Specifications

NPN PowerDI-8(5x6) High Power DIODES
VCEO
100V
Ic Max
3A
Pd Max
2.5W
hFE Gain
150
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Quick Reference

The DXTN3C100PSQ-13 is a NPN bipolar transistor in a PowerDI-8(5x6) package by DIODES. This datasheet provides complete specifications including 100V breakdown voltage and 3A continuous collector current. Download the DXTN3C100PSQ-13 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackagePowerDI-8(5x6)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic3ACollector current
Pd2.5WPower dissipation
DC Current Gain150hFE / Beta
Frequency140MHzTransition speed (fT)
VCEsat330mVSaturation voltage
Vebo7VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55℃~+175℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all PowerDI-8(5x6) NPN Transistors ›