DXTN07100BFG-7 Transistor Datasheet & Specifications
NPN
PowerDI3333-8
High Power
DIODES
VCEO
100V
Ic Max
2A
Pd Max
2.1W
hFE Gain
55
Quick Reference
The DXTN07100BFG-7 is a NPN bipolar transistor in a PowerDI3333-8 package by DIODES. This datasheet provides complete specifications including 100V breakdown voltage and 2A continuous collector current. Download the DXTN07100BFG-7 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | PowerDI3333-8 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 2A | Collector current |
| Pd | 2.1W | Power dissipation |
| DC Current Gain | 55 | hFE / Beta |
| Frequency | 175MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+175℃ | Operating temp |