DXT5551P5-13 Transistor Datasheet & Specifications
NPN
PowerDI-5
High Power
DIODES
VCEO
160V
Ic Max
600mA
Pd Max
2.25W
hFE Gain
80
Quick Reference
The DXT5551P5-13 is a NPN bipolar transistor in a PowerDI-5 package by DIODES. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the DXT5551P5-13 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | PowerDI-5 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 160V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 2.25W | Power dissipation |
| DC Current Gain | 80 | hFE / Beta |
| Frequency | 130MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |