DTC143EE-MS Transistor Datasheet & Specifications

NPN SOT-523 General Purpose MSKSEMI
VCEO
300mV
Ic Max
100mA
Pd Max
150mW
hFE Gain
1

Quick Reference

The DTC143EE-MS is a NPN bipolar transistor in a SOT-523 package by MSKSEMI. This datasheet provides complete specifications including 300mV breakdown voltage and 100mA continuous collector current. Download the DTC143EE-MS datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageSOT-523Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO300mVBreakdown voltage
Ic100mACollector current
Pd150mWPower dissipation
DC Current Gain1hFE / Beta
Frequency250MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current6.11kΩLeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT4401T-7-F NPN SOT-523 40V 600mA 150mW
MMBT2222AT-7-F NPN SOT-523 40V 600mA 150mW
2DC4617S-7-F NPN SOT-523 50V 150mA 150mW
BC847BT-7-F NPN SOT-523 45V 100mA 150mW
MMBT2222AT NPN SOT-523 40V 600mA 150mW
BC847CT NPN SOT-523 45V 100mA 150mW
BC847BT NPN SOT-523 45V 100mA 265mW
MMBT3904T-7-F NPN SOT-523 40V 200mA 150mW
MMBT3904FX NPN SOT-523 40V 200mA 200mW
MMBT3904T NPN SOT-523 40V 200mA 150mW