DSS5160V-7 Transistor Datasheet & Specifications
PNP
SOT-563
General Purpose
DIODES
VCEO
60V
Ic Max
1A
Pd Max
600mW
hFE Gain
150
Quick Reference
The DSS5160V-7 is a PNP bipolar transistor in a SOT-563 package by DIODES. This datasheet provides complete specifications including 60V breakdown voltage and 1A continuous collector current. Download the DSS5160V-7 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-563 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 1A | Collector current |
| Pd | 600mW | Power dissipation |
| DC Current Gain | 150 | hFE / Beta |
| Frequency | 150MHz | Transition speed (fT) |
| VCEsat | 175mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 50uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| DPLS160V-7 | PNP | SOT-563 | 60V | 1A | 300mW |