DP0150BLP4-7B Transistor Datasheet & Specifications

PNP DFN-3(1x0.6) General Purpose DIODES
VCEO
50V
Ic Max
100mA
Pd Max
1W
hFE Gain
200
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Quick Reference

The DP0150BLP4-7B is a PNP bipolar transistor in a DFN-3(1x0.6) package by DIODES. This datasheet provides complete specifications including 50V breakdown voltage and 100mA continuous collector current. Download the DP0150BLP4-7B datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageDFN-3(1x0.6)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic100mACollector current
Pd1WPower dissipation
DC Current Gain200hFE / Beta
Frequency80MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
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