DP0150BLP4-7 Transistor Datasheet & Specifications
PNP
X2-DFN1006-3
General Purpose
DIODES
VCEO
50V
Ic Max
100mA
Pd Max
1W
hFE Gain
200
Quick Reference
The DP0150BLP4-7 is a PNP bipolar transistor in a X2-DFN1006-3 package by DIODES. This datasheet provides complete specifications including 50V breakdown voltage and 100mA continuous collector current. Download the DP0150BLP4-7 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | X2-DFN1006-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 80MHz | Transition speed (fT) |
| VCEsat | 300mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |