DN0150ALP4-7B Transistor Datasheet & Specifications

NPN DFN1006-3 General Purpose DIODES
VCEO
50V
Ic Max
100mA
Pd Max
1W
hFE Gain
120
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Quick Reference

The DN0150ALP4-7B is a NPN bipolar transistor in a DFN1006-3 package by DIODES. This datasheet provides complete specifications including 50V breakdown voltage and 100mA continuous collector current. Download the DN0150ALP4-7B datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageDFN1006-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic100mACollector current
Pd1WPower dissipation
DC Current Gain120hFE / Beta
Frequency60MHzTransition speed (fT)
VCEsat250mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all DFN1006-3 NPN Transistors ›