DMMT5551-7-F Transistor Datasheet & Specifications
NPN
SOT-26
General Purpose
DIODES
VCEO
160V
Ic Max
200mA
Pd Max
300mW
hFE Gain
80
Quick Reference
The DMMT5551-7-F is a NPN bipolar transistor in a SOT-26 package by DIODES. This datasheet provides complete specifications including 160V breakdown voltage and 200mA continuous collector current. Download the DMMT5551-7-F datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-26 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 160V | Breakdown voltage |
| Ic | 200mA | Collector current |
| Pd | 300mW | Power dissipation |
| DC Current Gain | 80 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | 150mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |