D209L Transistor Datasheet & Specifications
NPN
TO-3PNB
High Power
OSEN
VCEO
400V
Ic Max
12A
Pd Max
130W
hFE Gain
40
Quick Reference
The D209L is a NPN bipolar transistor in a TO-3PNB package by OSEN. This datasheet provides complete specifications including 400V breakdown voltage and 12A continuous collector current. Download the D209L datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | OSEN | Original Manufacturer |
| Package | TO-3PNB | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 400V | Breakdown voltage |
| Ic | 12A | Collector current |
| Pd | 130W | Power dissipation |
| DC Current Gain | 40 | hFE / Beta |
| Frequency | 4MHz | Transition speed (fT) |
| VCEsat | 1V | Saturation voltage |
| Vebo | 9V | Emitter-Base voltage |
| Cutoff Current | 10uA | Leakage (ICBO) |
| Temp | - | Operating temp |