BUV21G Transistor Datasheet & Specifications
NPN
TO-204-2
High Power
onsemi
VCEO
200V
Ic Max
40A
Pd Max
250W
hFE Gain
20
Quick Reference
The BUV21G is a NPN bipolar transistor in a TO-204-2 package by onsemi. This datasheet provides complete specifications including 200V breakdown voltage and 40A continuous collector current. Download the BUV21G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-204-2 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 200V | Breakdown voltage |
| Ic | 40A | Collector current |
| Pd | 250W | Power dissipation |
| DC Current Gain | 20 | hFE / Beta |
| Frequency | 8MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -65℃~+200℃ | Operating temp |