BUH517 Transistor Datasheet & Specifications
NPN
TO-3PML
High Power
SPTECH
VCEO
700V
Ic Max
8A
Pd Max
60W
hFE Gain
6
Quick Reference
The BUH517 is a NPN bipolar transistor in a TO-3PML package by SPTECH. This datasheet provides complete specifications including 700V breakdown voltage and 8A continuous collector current. Download the BUH517 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3PML | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 700V | Breakdown voltage |
| Ic | 8A | Collector current |
| Pd | 60W | Power dissipation |
| DC Current Gain | 6 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 1.5V | Saturation voltage |
| Vebo | 10V | Emitter-Base voltage |
| Cutoff Current | 2mA | Leakage (ICBO) |
| Temp | - | Operating temp |