BU508AW Transistor Datasheet & Specifications
NPN
TO-247
High Power
ST
VCEO
700V
Ic Max
8A
Pd Max
125W
hFE Gain
5
Quick Reference
The BU508AW is a NPN bipolar transistor in a TO-247 package by ST. This datasheet provides complete specifications including 700V breakdown voltage and 8A continuous collector current. Download the BU508AW datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST | Original Manufacturer |
| Package | TO-247 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 700V | Breakdown voltage |
| Ic | 8A | Collector current |
| Pd | 125W | Power dissipation |
| DC Current Gain | 5 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 1V | Saturation voltage |
| Vebo | 9V | Emitter-Base voltage |
| Cutoff Current | 2mA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SC4237 | NPN | TO-247 | 800V | 10A | 150W |