BU406-JSM Transistor Datasheet & Specifications
NPN
TO-220-3
High Power
JSMSEMI
VCEO
200V
Ic Max
7A
Pd Max
60W
hFE Gain
100
Quick Reference
The BU406-JSM is a NPN bipolar transistor in a TO-220-3 package by JSMSEMI. This datasheet provides complete specifications including 200V breakdown voltage and 7A continuous collector current. Download the BU406-JSM datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | TO-220-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 200V | Breakdown voltage |
| Ic | 7A | Collector current |
| Pd | 60W | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 10MHz | Transition speed (fT) |
| VCEsat | 1V | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 5uA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| BU941ZT | NPN | TO-220-3 | 350V | 15A | 150W |