BFR193WH6327 Transistor Datasheet & Specifications

NPN SOT-323 General Purpose Infineon
VCEO
12V
Ic Max
80mA
Pd Max
580mW
hFE Gain
70

Quick Reference

The BFR193WH6327 is a NPN bipolar transistor in a SOT-323 package by Infineon. This datasheet provides complete specifications including 12V breakdown voltage and 80mA continuous collector current. Download the BFR193WH6327 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO12VBreakdown voltage
Ic80mACollector current
Pd580mWPower dissipation
DC Current Gain70hFE / Beta
Frequency8GHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo2VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMST4401-7-F NPN SOT-323 40V 600mA 200mW
MMSTA42-7-F NPN SOT-323 300V 200mA 200mW
MMST3904-7-F NPN SOT-323 40V 200mA 200mW
BC817-40W-7 NPN SOT-323 45V 500mA 200mW
BC850CW,115 NPN SOT-323 45V 100mA 200mW
BC847CW-7-F NPN SOT-323 45V 100mA 200mW
MMST2222A-7-F NPN SOT-323 40V 600mA 200mW
DSS4160U-7 NPN SOT-323 60V 1A 400mW
PMST4401,115 NPN SOT-323 40V 600mA 200mW
MMST3904 NPN SOT-323 40V 200mA 200mW