BFP650H6327 Transistor Datasheet & Specifications

NPN SOT-343-4 General Purpose Infineon
VCEO
4V
Ic Max
150mA
Pd Max
500mW
hFE Gain
100

Quick Reference

The BFP650H6327 is a NPN bipolar transistor in a SOT-343-4 package by Infineon. This datasheet provides complete specifications including 4V breakdown voltage and 150mA continuous collector current. Download the BFP650H6327 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageSOT-343-4Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO4VBreakdown voltage
Ic150mACollector current
Pd500mWPower dissipation
DC Current Gain100hFE / Beta
Frequency42GHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo1.2VEmitter-Base voltage
Cutoff Current40nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.