BFP640H6327 Transistor Datasheet & Specifications
NPN
SOT-343
General Purpose
Infineon
VCEO
4.1V
Ic Max
50mA
Pd Max
200mW
hFE Gain
110
Quick Reference
The BFP640H6327 is a NPN bipolar transistor in a SOT-343 package by Infineon. This datasheet provides complete specifications including 4.1V breakdown voltage and 50mA continuous collector current. Download the BFP640H6327 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | SOT-343 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 4.1V | Breakdown voltage |
| Ic | 50mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 110 | hFE / Beta |
| Frequency | 42GHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | 1.2V | Emitter-Base voltage |
| Cutoff Current | 40nA | Leakage (ICBO) |
| Temp | -55โ~+150โ | Operating temp |