BFP 650F H6327 Transistor Datasheet & Specifications
NPN
TSFP-4
General Purpose
Infineon
VCEO
4V
Ic Max
150mA
Pd Max
500mW
hFE Gain
270
Quick Reference
The BFP 650F H6327 is a NPN bipolar transistor in a TSFP-4 package by Infineon. This datasheet provides complete specifications including 4V breakdown voltage and 150mA continuous collector current. Download the BFP 650F H6327 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | TSFP-4 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 4V | Breakdown voltage |
| Ic | 150mA | Collector current |
| Pd | 500mW | Power dissipation |
| DC Current Gain | 270 | hFE / Beta |
| Frequency | 42GHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | 1.2V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | - | Operating temp |