BD238 Transistor Datasheet & Specifications
PNP
TO-126
General Purpose
HXY MOSFET
VCEO
100V
Ic Max
1.5A
Pd Max
1W
hFE Gain
-
Quick Reference
The BD238 is a PNP bipolar transistor in a TO-126 package by HXY MOSFET. This datasheet provides complete specifications including 100V breakdown voltage and 1.5A continuous collector current. Download the BD238 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 1.5A | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | - | hFE / Beta |
| Frequency | 50MHz | Transition speed (fT) |
| VCEsat | 500mV@2A,0.2A | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |