BD139-16 Transistor Datasheet & Specifications
NPN
SOT-32-3
High Power
ST
VCEO
80V
Ic Max
1.5A
Pd Max
12.5W
hFE Gain
100
Quick Reference
The BD139-16 is a NPN bipolar transistor in a SOT-32-3 package by ST. This datasheet provides complete specifications including 80V breakdown voltage and 1.5A continuous collector current. Download the BD139-16 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST | Original Manufacturer |
| Package | SOT-32-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 80V | Breakdown voltage |
| Ic | 1.5A | Collector current |
| Pd | 12.5W | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 10uA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| BD679A | NPN | SOT-32-3 | 80V | 4A | 40W |