BC857BLP-7 Transistor Datasheet & Specifications
PNP
DFN-3L(0.6x1)
General Purpose
DIODES
VCEO
45V
Ic Max
100mA
Pd Max
1W
hFE Gain
220
Quick Reference
The BC857BLP-7 is a PNP bipolar transistor in a DFN-3L(0.6x1) package by DIODES. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the BC857BLP-7 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | DFN-3L(0.6x1) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 45V | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 220 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 300mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 4uA | Leakage (ICBO) |
| Temp | -55โ~+150โ | Operating temp |