BC850BWE6327-HXY Transistor Datasheet & Specifications

NPN SOT-323 General Purpose HXY MOSFET
VCEO
45V
Ic Max
100mA
Pd Max
150mW
hFE Gain
450

Quick Reference

The BC850BWE6327-HXY is a NPN bipolar transistor in a SOT-323 package by HXY MOSFET. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the BC850BWE6327-HXY datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO45VBreakdown voltage
Ic100mACollector current
Pd150mWPower dissipation
DC Current Gain450hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMSTA42-7-F NPN SOT-323 300V 200mA 200mW
BC817-40W-7 NPN SOT-323 45V 500mA 200mW
BC850CW,115 NPN SOT-323 45V 100mA 200mW
BC847CW-7-F NPN SOT-323 45V 100mA 200mW
DSS4160U-7 NPN SOT-323 60V 1A 400mW
BC847BW(UMW) NPN SOT-323 45V 100mA 150mW
BC817-25W,115 NPN SOT-323 45V 500mA 200mW
ZUMT491 NPN SOT-323 60V 1A 250mW
BC847BW,115 NPN SOT-323 45V 100mA 200mW
BC847W,115 NPN SOT-323 45V 100mA 200mW