BC847QAPNZ Transistor Datasheet & Specifications
NPN+PNP
DFN-6(1x1)
General Purpose
Nexperia
VCEO
45V
Ic Max
100mA
Pd Max
350mW
hFE Gain
200
Quick Reference
The BC847QAPNZ is a NPN+PNP bipolar transistor in a DFN-6(1x1) package by Nexperia. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the BC847QAPNZ datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | DFN-6(1x1) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 45V | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 350mW | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 100mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 5uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |