BC847BFA-7B Transistor Datasheet & Specifications
NPN
DFN-3(0.8x0.6)
General Purpose
DIODES
VCEO
45V
Ic Max
100mA
Pd Max
435mW
hFE Gain
200
Quick Reference
The BC847BFA-7B is a NPN bipolar transistor in a DFN-3(0.8x0.6) package by DIODES. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the BC847BFA-7B datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | DFN-3(0.8x0.6) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 45V | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 435mW | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 170MHz | Transition speed (fT) |
| VCEsat | 50mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 15nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| BC847BFAQ-7B | NPN | DFN-3(0.8x0.6) | 45V | 100mA | 435mW |