BC846BWT1G Transistor Datasheet & Specifications
NPN
SC-70(SOT-323)
General Purpose
onsemi
VCEO
65V
Ic Max
100mA
Pd Max
200mW
hFE Gain
150
Quick Reference
The BC846BWT1G is a NPN bipolar transistor in a SC-70(SOT-323) package by onsemi. This datasheet provides complete specifications including 65V breakdown voltage and 100mA continuous collector current. Download the BC846BWT1G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SC-70(SOT-323) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 65V | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 150 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |