BC817-40QBZ Transistor Datasheet & Specifications

NPN DFN-3(1.1x1) General Purpose Nexperia
VCEO
45V
Ic Max
500mA
Pd Max
350mW
hFE Gain
250
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Quick Reference

The BC817-40QBZ is a NPN bipolar transistor in a DFN-3(1.1x1) package by Nexperia. This datasheet provides complete specifications including 45V breakdown voltage and 500mA continuous collector current. Download the BC817-40QBZ datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerNexperiaOriginal Manufacturer
PackageDFN-3(1.1x1)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO45VBreakdown voltage
Ic500mACollector current
Pd350mWPower dissipation
DC Current Gain250hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

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