BC808-25LT1G Transistor Datasheet & Specifications

PNP SOT-23 General Purpose onsemi
VCEO
25V
Ic Max
500mA
Pd Max
225mW
hFE Gain
160

Quick Reference

The BC808-25LT1G is a PNP bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 25V breakdown voltage and 500mA continuous collector current. Download the BC808-25LT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO25VBreakdown voltage
Ic500mACollector current
Pd225mWPower dissipation
DC Current Gain160hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat700mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
SS8550 PNP SOT-23 25V 1.5A 350mW
LBSS5240LT1G PNP SOT-23 40V 2A 300mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
S9012 PNP SOT-23 25V 500mA 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
LBC807-40LT1G PNP SOT-23 45V 500mA 225mW
FMMT591ATA PNP SOT-23 40V 1A 500mW
PBSS5160T,215 PNP SOT-23 60V 1A 400mW