BC807 Transistor Datasheet & Specifications

PNP SOT-23 General Purpose High Diode
VCEO
45V
Ic Max
500mA
Pd Max
300mW
hFE Gain
600

Quick Reference

The BC807 is a PNP bipolar transistor in a SOT-23 package by High Diode. This datasheet provides complete specifications including 45V breakdown voltage and 500mA continuous collector current. Download the BC807 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHigh DiodeOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO45VBreakdown voltage
Ic500mACollector current
Pd300mWPower dissipation
DC Current Gain600hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat700mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
LBC807-40LT1G PNP SOT-23 45V 500mA 225mW
PBSS5160T,215 PNP SOT-23 60V 1A 400mW
MMBT5401 PNP SOT-23 150V 500mA 225mW
MMBT2907A PNP SOT-23 60V 600mA 300mW
MMBT5401 PNP SOT-23 150V 600mA 300mW
MMBT2907A PNP SOT-23 60V 600mA 250mW