50N03DF MOSFET Datasheet & Specifications

N-Channel PDFN3x3-8 Logic-Level GOODWORK
Vds Max
30V
Id Max
50A
Rds(on)
8.5mΩ@10V
Vgs(th)
2.5V

Quick Reference

The 50N03DF is an N-Channel MOSFET in a PDFN3x3-8 package, manufactured by GOODWORK. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 50A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerGOODWORKOriginal Manufacturer
PackagePDFN3x3-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)50AMax current handling
Power Dissipation (Pd)18WMax thermal limit
On-Resistance (Rds(on))8.5mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)12.8nC@4.5VSwitching energy
Input Capacitance (Ciss)1.2nFInternal gate capacitance
Output Capacitance (Coss)163pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
TW65N04CC N-Channel PDFN3x3-8 40V 65A 13.3mΩ@4.5V 3V
TWGMC 📄 PDF