50N03D MOSFET Datasheet & Specifications

N-Channel PDFN(3x3) High-Current HL
Vds Max
30V
Id Max
50A
Rds(on)
14mΩ@4.5V
Vgs(th)
-

Quick Reference

The 50N03D is an N-Channel MOSFET in a PDFN(3x3) package, manufactured by HL. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 50A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerHLOriginal Manufacturer
PackagePDFN(3x3)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)50AMax current handling
Power Dissipation (Pd)18WMax thermal limit
On-Resistance (Rds(on))14mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))-Voltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)-Internal gate capacitance
Output Capacitance (Coss)163pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
No exact equivalents found in database.