3DD13009AN Transistor Datasheet & Specifications
NPN
TO-3PN
High Power
Wuxi China Resources Huajing Microelectronics
VCEO
400V
Ic Max
12A
Pd Max
120W
hFE Gain
35
Quick Reference
The 3DD13009AN is a NPN bipolar transistor in a TO-3PN package by Wuxi China Resources Huajing Microelectronics. This datasheet provides complete specifications including 400V breakdown voltage and 12A continuous collector current. Download the 3DD13009AN datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Wuxi China Resources Huajing Microelectronics | Original Manufacturer |
| Package | TO-3PN | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 400V | Breakdown voltage |
| Ic | 12A | Collector current |
| Pd | 120W | Power dissipation |
| DC Current Gain | 35 | hFE / Beta |
| Frequency | 4MHz | Transition speed (fT) |
| VCEsat | 1V | Saturation voltage |
| Vebo | 9V | Emitter-Base voltage |
| Cutoff Current | 100uA | Leakage (ICBO) |
| Temp | - | Operating temp |