2SJ168TE85LF MOSFET Datasheet & Specifications
P-Channel
SC-59
Standard Power
TOSHIBA
Vds Max
60V
Id Max
200mA
Rds(on)
2Ω@10V
Vgs(th)
3.5V
Quick Reference
The 2SJ168TE85LF is an P-Channel MOSFET in a SC-59 package, manufactured by TOSHIBA. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 200mA. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | SC-59 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 200mA | Max current handling |
| Power Dissipation (Pd) | 200mW | Max thermal limit |
| On-Resistance (Rds(on)) | 2Ω@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.5V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 85pF | Internal gate capacitance |
| Output Capacitance (Coss) | 60pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||