2SD2701TL Datasheet & Equivalents
NPN
UMT-3
General Purpose
ROHM
VCEO
30V
Ic Max
1.5A
Pd Max
800mW
hFE Gain
270
Quick Reference
The 2SD2701TL is a NPN bipolar junction transistor in a UMT-3 package, manufactured by ROHM. It supports a breakdown voltage of 30V and continuous collector current of 1.5A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | UMT-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 30V | Max breakdown voltage |
| Collector Current (Ic) | 1.5A | Max current handling |
| Power Dissipation (Pd) | 800mW | Max thermal limit |
| DC Current Gain (hFE) | 270 | Base signal amplification ratio |
| Transition Frequency (fT) | 300MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 350mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 6V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||