2SD2657TL Datasheet & Equivalents
NPN
TSMT-3
General Purpose
ROHM
VCEO
30V
Ic Max
1.5A
Pd Max
1W
hFE Gain
270
Quick Reference
The 2SD2657TL is a NPN bipolar junction transistor in a TSMT-3 package, manufactured by ROHM. It supports a breakdown voltage of 30V and continuous collector current of 1.5A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | TSMT-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 30V | Max breakdown voltage |
| Collector Current (Ic) | 1.5A | Max current handling |
| Power Dissipation (Pd) | 1W | Max thermal limit |
| DC Current Gain (hFE) | 270 | Base signal amplification ratio |
| Transition Frequency (fT) | 300MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 350mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |