2SD2470L-E-T9S-B Datasheet & Equivalents
NPN
TO-92
General Purpose
UTC
VCEO
10V
Ic Max
5A
Pd Max
400mW
hFE Gain
820
Quick Reference
The 2SD2470L-E-T9S-B is a NPN bipolar junction transistor in a TO-92 package, manufactured by UTC. It supports a breakdown voltage of 10V and continuous collector current of 5A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | UTC | Original Manufacturer |
| Package | TO-92 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 10V | Max breakdown voltage |
| Collector Current (Ic) | 5A | Max current handling |
| Power Dissipation (Pd) | 400mW | Max thermal limit |
| DC Current Gain (hFE) | 820 | Base signal amplification ratio |
| Transition Frequency (fT) | 170MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 500mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 15V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| KSD5041RTA | NPN | TO-92 | 20V | 5A | 180 | 750mW | onsemi 📄 PDF |
| D965-TA | NPN | TO-92 | 22V | 5A | 2000 | 750mW | JSCJ 📄 PDF |