2SD1816S-TL-E Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNTO-252(DPAK)General Purpose
VCEO
-
Ic Max
100V
Pd Max
4A
Gain
-55โ„ƒ~+150โ„ƒ

Quick Reference

The 2SD1816S-TL-E is a NPN bipolar transistor in a TO-252(DPAK) package. This datasheet provides complete specifications including - breakdown voltage and 100V continuous collector current. Download the 2SD1816S-TL-E datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting
VCEO-Breakdown voltage
IC Max100VCollector current
Pd Max4APower dissipation
Gain-55โ„ƒ~+150โ„ƒDC current gain
Frequency140Transition speed
VCEsat180MHzSaturation voltage
Vebo1uAEmitter-Base voltage
Temp20WOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd