2SD1816G-R-TF3-T Datasheet & Equivalents
NPN
TO-220F
General Purpose
UTC
VCEO
100V
Ic Max
4A
Pd Max
2W
hFE Gain
560
Quick Reference
The 2SD1816G-R-TF3-T is a NPN bipolar junction transistor in a TO-220F package, manufactured by UTC. It supports a breakdown voltage of 100V and continuous collector current of 4A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | UTC | Original Manufacturer |
| Package | TO-220F | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 100V | Max breakdown voltage |
| Collector Current (Ic) | 4A | Max current handling |
| Power Dissipation (Pd) | 2W | Max thermal limit |
| DC Current Gain (hFE) | 560 | Base signal amplification ratio |
| Transition Frequency (fT) | 180MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 400mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 6V | Max emitter-base breakdown |
| Collector Cutoff Current | 1uA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| TIP41CF-U/PF | NPN | TO-220F | 100V | 6A | 75 | 25W | KEC 📄 PDF |