2SC5876T106Q Transistor Datasheet & Specifications
NPNSOT-323-3General Purpose
VCEO
60V
Ic Max
500mA
Pd Max
200mW
Gain
-
Quick Reference
The 2SC5876T106Q is a NPN bipolar transistor in a SOT-323-3 package. This datasheet provides complete specifications including 60V breakdown voltage and 500mA continuous collector current. Download the 2SC5876T106Q datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | SOT-323-3 | Physical mounting |
| VCEO | 60V | Breakdown voltage |
| IC Max | 500mA | Collector current |
| Pd Max | 200mW | Power dissipation |
| Gain | - | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | - | Saturation voltage |
| Vebo | 300MHz | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|